Journal of the Korean Society of Mineral and Energy Resources Engineers ISSN:2288-0291(Print) 2288-2790(Online) 한국자원공학회지

The absorption and photoluminescence spectrum analysis was conducted to test the applicability of Nd:LLM(Nd:LiLa(MoO4)2) single crystal grown by Czochralski method as the host material for laser-diode pumped microchip laser. The absorption band of 4I9/2 → 4F5/2 transition was 809 nm which corresponds to the pumped wavelength of laser diode, and the stimulated emission of 4F3/2 →4I11/2 transition were observed with the wavelength of 1.06 μm. These results are comparable to the properties of Nd:YAG(Nd:Y3Al5O12) suggesting that Nd:LLM crystal could be used as the laser host material of diode laser and a substitution of Nd:YAG laser. The absolute and slope lasing efficiencies of the crystal oriented with <101> at the wavelength of 1.06 μm measured by laser oscillation was 28% and 33%, respectively. The maximum output of microchip laser was 106 mW against 380 mW of pumped laser diode. Nevertheless, the lasing test for the crystal oriented with <112> showed no lasing due possibly to disorientation.